BD336
SILICON PNP POWER DARLINGTON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
PNP DARLINGTON
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The BD336 is a silicon epitaxial-base PNP
transistor in Darlingon configuration mounted in
SOT-82 plastic package.
It is inteded for use in audio output stages
general amplifier and switching applications.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
-100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-6
A
I
CM
Collector Peak Current (t
p
< 10ms)
-10
A
I
B
Base Current
-0.15
A
P
tot
Total Dissipation at T
c
25
o
C
60
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
SOT-82
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.08
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -100 V
V
CB
= -100 V T
C
= 150
o
C
-0.2
-2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= -50 V
-0.5
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V
-5
mA
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -3 A I
B
= -12 mA
-2
V
V
BE
Base-Emitter Voltage
I
C
= -3 A V
CE
= -3 V
-2.5
V
h
FE
DC Current Gain
I
C
= -0.5 A V
CE
= -3 V
I
C
= -3 A V
CE
= -3 V
I
C
= -6 A V
CE
= -3 V
750
2700
400
V
F
Parallel Diode Forward
Voltage
I
F
= -3 A
-1.8
V
h
fe
Small Signal Current
Gain
I
C
= -3 A V
CE
= -3 V f = 1MHz
150
t
on
Turn on Time
I
C
= -3 A V
CC
= -30 V
I
B1
= -I
B2
= -12 mA
1
2
s
t
off
Turn off Time
5
10
s
Pulsed: Pulse duration = 300
s, duty cycle
1.5 %
BD336
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.444
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.04
0.106
c1
1.0
1.3
0.039 0.05
D
15.4
16
0.606 0.629
e
2.2
0.087
e3
4.15 4.65
0.163
0.183
F
3.8
0.150
H
2.54
0.100
H2
2.15
0.084
F
A
H
B
D
e3
e
b1
c1
C
b
H2
P032A
SOT-82 MECHANICAL DATA
BD336
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BD336
4/4
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